从“岛”到“膜”：西安电子科技大学攻克半导体散热世界难题

Core Insights - The breakthrough in semiconductor technology involves transforming rough "island" interfaces into atomically smooth "films," significantly enhancing chip heat dissipation and performance [1][2] - The new "ion implantation induced nucleation" technique allows for precise and uniform growth of materials, addressing a long-standing issue in chip manufacturing [1] - The developed aluminum nitride (AlN) structure has a thermal resistance that is only one-third of traditional methods, leading to improved device efficiency [1] Group 1 - The innovation enables aluminum nitride to transition from a specific "adhesive" to a versatile "universal integration platform" for various materials [2] - GaN microwave power devices produced using this technology achieve output power densities of 42 watts/mm and 20 watts/mm in the X-band and Ka-band, respectively, marking a 30%-40% increase over international records [2] - This advancement not only enhances performance but also addresses common thermal challenges faced by third and fourth-generation semiconductors, laying the foundation for future industries such as 5G/6G communications and satellite internet [2] Group 2 - The technology is expected to improve signal quality and battery life for mobile devices in remote areas [2] - Future research may focus on materials with even better thermal conductivity, such as diamond, potentially increasing device power handling capabilities by an order of magnitude [2]