我国攻克半导体材料世界难题

Core Viewpoint - The breakthrough in semiconductor materials integration by the team from Xi'an University of Electronic Science and Technology addresses a long-standing bottleneck in chip performance related to heat dissipation, transforming rough "island" interfaces into atomically smooth "films" [1][3] Group 1: Technological Innovation - The team developed a novel "ion implantation induced nucleation" technology that allows for precise and uniform growth, overcoming the random growth process that previously hindered performance [3] - The new structural interface exhibits thermal resistance that is only one-third of that of traditional methods, significantly improving heat dissipation [3] Group 2: Performance Enhancement - Gallium nitride microwave power devices produced using this technology achieved output power densities of 42 watts/mm in the X-band and 20 watts/mm in the Ka-band, marking a 30%-40% increase over international records [3] - This advancement implies that the same chip area can achieve greater detection distances and more energy-efficient coverage for communication base stations [3]