露笑科技子公司8英寸导电型碳化硅衬底取得重大突破

Core Insights - Company LuXiao Technology has made significant breakthroughs in the research and industrialization of 8-inch conductive silicon carbide substrates, achieving advanced industry-level core technical indicators [1][2] Group 1: Technological Advancements - Hefei LuXiao Semiconductor Materials Co., Ltd. has mastered the growth process parameters for 8-inch conductive silicon carbide crystals, successfully producing high-quality crystals with stable crystal quality and controlled morphology [1] - Key parameters such as micro-pipe density, surface roughness, dislocation density, and uniformity of resistivity distribution have met or exceeded mainstream industry standards, providing a solid foundation for downstream customers to manufacture high-performance silicon carbide power devices [1] Group 2: Strategic Planning - Based on the breakthroughs in 8-inch conductive silicon carbide substrates, the company has developed a clear strategic plan, focusing on the construction of production lines for 8-inch silicon carbide substrates to meet the growing market demand in sectors like new energy vehicles, photovoltaic power generation, energy storage, and industrial control [2] - The company will continue to increase R&D investment to optimize production processes for 8-inch conductive silicon carbide, aiming to enhance product performance while reducing manufacturing costs [2] Group 3: Market and Collaboration - As the 8-inch silicon carbide substrate products mature, the company plans to engage in deep collaborations and product validations with well-known power device manufacturers and end-user clients, enhancing upstream and downstream strategic synergy [2] - Industry experts view 8-inch silicon carbide substrates as a crucial direction for the large-scale application and cost optimization of third-generation semiconductors, with the company's achievements providing strong support for domestic innovation in semiconductor materials [2]