极限密度！我国新成果有望让器件“存得更多 占得更少”

Core Insights - The research team from the Chinese Academy of Sciences has discovered a one-dimensional charged domain wall in ferroelectric materials, which significantly enhances device storage density, providing a scientific basis for developing devices with extreme density [1] Group 1: Research Findings - The thickness and width of the one-dimensional charged domain wall are approximately one hundred thousandth of a human hair, challenging the traditional belief that domain walls in three-dimensional crystals must be two-dimensional surfaces [1] - This discovery has the potential to increase storage density by several hundred times, with theoretical estimates reaching about 20TB per square centimeter, equivalent to storing 10,000 HD movies or 200,000 HD short videos on a device the size of a postage stamp [1] Group 2: Applications and Implications - Ferroelectric materials have significant application potential in information storage, sensing, and artificial intelligence [1] - The findings have been published in the international academic journal "Science," indicating the research's relevance and impact in the scientific community [1]