Core Viewpoint - A significant breakthrough in semiconductor technology has been achieved by a research team at Xi'an University of Electronic Science and Technology, which enhances chip heat dissipation efficiency and overall performance by transforming the "island-like" connections between materials into atomically smooth "thin films" [1][2]. Group 1: Research Breakthrough - The research team developed a new growth mode for aluminum nitride (AlN) layers, changing them from rough "polycrystalline island-like" structures to highly ordered "single crystal thin films" [2]. - The new "ion implantation induced nucleation" technique allows for precise and uniform growth, significantly reducing interface defects and thermal resistance [2]. - Experimental data shows that the new interface thermal resistance is only one-third of that of the traditional "island-like" structure, marking a major advancement in the field [2]. Group 2: Performance Improvement - The GaN microwave power devices produced using this innovative AlN thin film technology achieved output power densities of 42W/mm and 20W/mm in the X-band and Ka-band, respectively, improving international performance records by 30% to 40% [2]. - This advancement allows for increased detection range without changing chip size and enables communication base stations to achieve longer signal coverage with lower energy consumption [2][3]. Group 3: Broader Implications - The technology's benefits will gradually be realized by the general public, potentially enhancing mobile signal reception and battery life in remote areas [3]. - The breakthrough provides a scalable "universal integration platform" for high-quality integration of various semiconductor materials, offering a replicable model for global challenges in the semiconductor industry [3]. - Future research may explore replacing AlN with diamond, which could further enhance power handling capabilities by an order of magnitude, indicating ongoing exploration of material limits as a driving force in semiconductor technology advancement [3].
西电团队攻克芯片散热世界难题
Zhong Guo Qing Nian Bao·2026-01-23 06:30