我国科研团队在二维半导体领域取得新进展

Core Viewpoint - The research teams from Nanjing University and Southeast University have developed an innovative "oxygen-assisted metal-organic chemical vapor deposition technology" to overcome the challenges of large-scale production of molybdenum disulfide thin films, which are seen as a potential alternative to silicon-based semiconductors as silicon approaches its physical limits [1][2]. Group 1: Technology Development - The new technology significantly improves the growth rate of molybdenum disulfide films by two to three orders of magnitude compared to traditional methods, addressing the kinetic limitations and carbon contamination issues that have hindered the use of metal-organic chemical vapor deposition [1]. - The introduction of oxygen in the high-temperature environment allows for the combination of oxygen with carbon elements in the precursor, reducing carbon pollution and enhancing film quality [1]. Group 2: Future Prospects - The research teams have mastered key industrial technologies related to two-dimensional semiconductor substrate engineering and kinetic control, and are now focusing on developing new deposition equipment for the large-scale production of 12-inch molybdenum disulfide films, which aligns with the existing 12-inch silicon semiconductor production lines [2]. - The significance of this research is highlighted by reviewers from the journal "Science," who believe it will accelerate the transition of two-dimensional semiconductors from laboratory settings to production lines [2].