我们为什么一定要“星际航行”

Core Viewpoint - The research team from Nanjing University and Southeast University has developed an innovative "oxygen-assisted metal-organic chemical vapor deposition technology" to overcome the challenges in the large-scale production of molybdenum disulfide thin films, which are seen as a potential alternative to silicon-based semiconductors [1][2]. Group 1: Research and Development - The team has successfully created 6-inch molybdenum disulfide thin films, achieving a growth rate that is two to three orders of magnitude faster than traditional methods [1]. - The introduction of oxygen in the deposition process helps to reduce carbon contamination, which has been a significant issue affecting film quality [1][2]. Group 2: Industry Implications - The research addresses long-standing kinetic limitations and carbon pollution issues associated with traditional metal-organic chemical vapor deposition techniques, which is crucial for advancing two-dimensional semiconductors from laboratory settings to production lines [2]. - The team is now focusing on developing new deposition equipment to scale up the production of 12-inch molybdenum disulfide thin films, aligning with the industry standard for silicon-based semiconductor production [2].