全球首个超薄铋基铁电晶体管问世

Core Insights - The rapid development of artificial intelligence is challenging traditional chip architectures due to the "power wall" and "storage wall," which limit efficiency and increase energy consumption [1] - A breakthrough has been achieved by a research team led by Professor Peng Hailin at Peking University, who developed the world's first wafer-scale ultra-thin and uniform bismuth-based two-dimensional ferroelectric oxide, enabling the construction of high-speed ferroelectric transistors with ultra-low operating voltage and high durability [1][2] Group 1 - The new ferroelectric oxide exhibits a dielectric constant of up to 24 and structural stability at temperatures exceeding 600°C, while maintaining excellent ferroelectric properties at a single crystal cell thickness of approximately 1 nanometer [2] - The research team has created a high-performance array of ferroelectric transistors that outperform other storage technologies by 1 to 2 orders of magnitude, demonstrating 32 stable multi-level storage states and over 10 years of data retention capability [3] Group 2 - The devices can withstand 1.5 trillion cycles under conditions of 0.8 volts ultra-low voltage and 20 nanoseconds high-speed writing, exceeding the stringent standards for cloud AI computing [3] - The team has also developed dynamically reconfigurable in-memory logic circuits, allowing the same device to perform logic operations and switch to non-volatile storage under conventional CMOS voltage below 1 volt, paving the way for a new paradigm in adaptive intelligent chips [3]