Navitas Unveils Breakthrough 10 kW DC-DC Platform Delivering 98.5% Efficiency for 800 VDC Next-Gen AI Data Centers

Core Insights - Navitas Semiconductor has introduced a groundbreaking 10 kW DC-DC power platform that achieves up to 98.5% peak efficiency and operates at a switching frequency of 1 MHz, aimed at supporting the expansion of next-generation AI data centers [2][5]. Product Features - The all-GaN 10 kW platform operates from 800 V to 50 V and +/- 400 V to 50 V, utilizing advanced 650 V and 100 V GaNFast FETs in a three-level half-bridge architecture with synchronous rectification, achieving a power density of 2.1 kW/in³ [3][4]. - The platform is designed to simplify the adoption of high-power-density module designs for HVDC AI data centers, integrating auxiliary power and control [4]. Market Implications - The design platform is positioned to facilitate the transition to HVDC data center power infrastructure, which is essential for meeting the increasing power demands of AI workloads that may require 100 to 1,000 times more compute per query [5]. - Key data center customers are currently evaluating the 10 kW DC-DC platform through collaborative development, with its public debut scheduled for the APEC event in March 2026 [5]. Company Overview - Navitas Semiconductor specializes in GaN and SiC power semiconductors, focusing on innovation in AI data centers, performance computing, and energy infrastructure, with over 30 years of combined expertise in wide bandgap technologies [7]. - The company holds more than 300 patents and is recognized as the world's first semiconductor company to achieve CarbonNeutral certification [7].