Navitas' Gen-3 Fast SiC MOSFETs Accelerate Next-Gen AI Growth & EV Charging

Core Insights - Navitas Semiconductor has launched its new Gen-3 'Fast' (G3F) 650 V and 1,200 V SiC MOSFETs, which are designed for high-speed switching, efficiency, and power density in applications such as AI data centers, EV chargers, and solar energy systems [2][4][10] - The G3F family achieves up to 600 kHz switching speeds and offers hard-switching figures-of-merit that are 40% better than competitors, enabling higher wattage for next-generation AI power supply units [2][8] - The proprietary 'trench-assisted planar' technology used in G3F MOSFETs results in lower RDS(ON) and power losses, with up to 20% lower RDS(ON) at high temperatures compared to competitors [3][15] Product Performance - The G3F MOSFETs provide a power density of 138 W/inch³ and peak efficiency above 97%, meeting 'Titanium Plus' efficiency standards required in Europe [4] - For the EV market, the 1,200 V/34 mOhm G3F FETs enable a new 22 kW, 800V BiDirectional OBC and 3KW DC-DC converter, achieving a power density of 3.5 kW/L and peak efficiency of 95.5% [10] - GeneSiC MOSFETs feature the highest-published 100%-tested avalanche capability and longer short-circuit withstand time, making them suitable for high-power applications [9] Company Overview - Navitas Semiconductor is a pure-play next-generation power-semiconductor company founded in 2014, focusing on GaN and SiC technologies [11] - The company has over 250 patents issued or pending and was the first semiconductor company to achieve CarbonNeutral® certification [11]