金刚石芯片，首次演示

Core Viewpoint - The collaboration between AIST and Honda Research Institute has successfully developed a p-type diamond MOSFET prototype, demonstrating amperage-level high-speed switching operations, with plans to integrate this technology into next-generation mobile power devices for practical implementation in society [1][2]. Group 1: Development and Characteristics - The research team utilized larger substrates compared to traditional methods to increase current capacity and developed wiring technology for parallel operation [2]. - A single device with a gate width of 1020μm exhibited excellent operational characteristics, achieving high yield rates on the same substrate [2]. Group 2: Performance Evaluation - The configuration of 314 individual components allowed for parallel connection of source, gate, and drain electrodes, resulting in a total gate width of approximately 32cm [3]. - The switching speed was evaluated using a double-pulse method, confirming a fall time of 19 nanoseconds and a rise time of 32 nanoseconds at a drive current of 2.5A [3].