信越化学开发出数据中心半导体使用的节电基板

Core Insights - Shin-Etsu Chemical has developed a large "QST substrate" for the manufacturing of gallium nitride (GaN) semiconductors, which supports high voltage above 650 volts, helping to reduce power loss [2][4] - The company aims to enhance power control efficiency for AI data centers and electric vehicles (EVs) through its innovative materials and production methods [2][4] Group 1: Product Development - The newly developed 300mm substrate allows for the production of GaN transistors that can handle high voltage, which is crucial for energy efficiency [2][4] - The GaN layer's thickness is directly related to its ability to withstand high voltage, with thicker layers providing better performance [4] Group 2: Production Efficiency - Shin-Etsu's substrate minimizes warping issues that previously hindered the scaling of GaN on standard silicon wafers, enabling larger production [4] - The company plans to establish mass production of the 300mm substrate within two to three years, collaborating with imec to develop transistors capable of withstanding over 1200 volts [4] Group 3: Market Applications - The technology is particularly beneficial for data centers, which have high energy consumption, and for onboard chargers in electric vehicles [4]