三星：NAND闪存功耗大降96%！

Core Viewpoint - Samsung Electronics' advanced technology research institute (SAIT) has discovered a mechanism that can reduce the power consumption of existing NAND flash memory by up to 96%, potentially addressing the power crisis in the AI era [2][4]. Group 1: Research Findings - The research paper titled "Ferroelectric Transistors for Low-Power NAND Flash Memory" was co-authored by 34 researchers from SAIT and the Semiconductor Research Institute and published in the prestigious journal Nature [4]. - The study reveals a fundamental technology that utilizes ferroelectric materials to achieve a power reduction of up to 96% compared to existing technologies [4]. - The new NAND flash structure combines ferroelectric materials with oxide semiconductor materials, allowing for significant power savings during the operation of memory cell strings [4]. Group 2: Technical Insights - Current NAND flash technology requires increasing the number of stacked layers to enhance storage capacity, which leads to higher voltage and increased read/write power consumption due to the structural characteristics of NAND flash [4]. - The next generation of NAND flash research leverages the properties of ferroelectric materials, which can store information by spontaneously changing polarization without the need to inject electrons into the cells [4]. - The trade-off between increased capacity and reduced power consumption remains unresolved in the current research [4].