国产高端氧化铈抛光液的技术突破与市场前景探析

Core Viewpoint - The article emphasizes the significance of domestic nano-spherical cerium oxide polishing slurry as a critical technology for advanced semiconductor manufacturing, highlighting its potential in the high-end CMP materials market and the challenges faced in achieving mass production and market acceptance [3][15]. Group 1: Domestic Market and Application Demand Analysis - The demand for high-end spherical cerium oxide polishing slurry in China's advanced storage chip manufacturing is estimated to reach approximately 1.7 billion RMB annually, with growth expected as the number of layers in 3D NAND chips increases [5]. - Key technical requirements from downstream wafer manufacturers include a polishing rate greater than 3000 Å/min, a selectivity ratio of SiO₂ to SiN exceeding 30:1, a surface defect rate near zero, and uniformity in removal rate of less than 3% across the wafer [6][7]. Group 2: Domestic Technical Breakthroughs and Core Challenges - Leading domestic companies have adopted solid-state and liquid-state methods as mainstream technical routes, achieving significant progress in laboratory and pilot stages, with the ability to produce spherical cerium oxide particles with a diameter of 10 to 200 nanometers and a sphericity above 95% [9]. - Domestic nano-spherical cerium oxide polishing slurries have shown comparable performance to international benchmarks like Fujifilm in key metrics such as polishing rate and selectivity, with some products demonstrating unique advantages in dispersion stability and defect control [11]. - Three main challenges remain for industrialization: achieving consistency in mass production, navigating lengthy certification cycles that can last 1 to 2 years, and managing high costs before achieving economies of scale [12]. Group 3: Case Study of Domestic Pioneers - Hunan Huirui Material Technology Co., Ltd. exemplifies domestic advancements in nano-spherical cerium oxide polishing slurry, utilizing an optimized solid-state synthesis system to achieve tunable particle sizes between 10-150 nm with a PDI of less than 0.1 [14]. - The company claims its unique polymer modification technology enhances dispersion stability, allowing the polishing slurry to remain stable for over 12 months without significant sedimentation [14]. - Initial testing at a mainstream wafer fab's 8-inch production line indicates that its product achieves a SiO₂ to SiN selectivity ratio exceeding 40:1, demonstrating potential to replace imported products [14]. Group 4: Future Prospects and Outlook - The domestic nano-spherical cerium oxide polishing slurry is on a fast track from technological development to industrial application, with foundational technologies established and market opportunities emerging [16]. - Success will depend not only on meeting technical standards but also on gaining trust and orders from downstream customers, necessitating collaborative innovation between material companies and wafer manufacturers [16].