三星宣布突破10nm DRAM技术!

Core Viewpoint - Samsung has developed a new type of transistor that enables the production of DRAM at process nodes below 10nm, addressing key challenges in mobile RAM expansion [2][4]. Group 1: Technology Development - The focus of this technology is to achieve DRAM processes smaller than 10nm, which is crucial for mobile RAM as traditional scaling methods have reached physical limits [4]. - Samsung's innovation centers on a "high-thermal-resistant amorphous oxide semiconductor transistor" that can withstand temperatures up to 550 degrees Celsius, preventing performance degradation [4]. - The channel length of this vertical channel transistor is 100nm and can be integrated with single-chip CoP DRAM architecture [4]. Group 2: Market Implications - The new transistor technology shows minimal degradation in drain current during testing and performs well in aging tests, enhancing Samsung's competitiveness in the high-density memory market [4]. - This technology is still in the research phase and is expected to debut in devices in 2026 and beyond [4].