性能突破性提升！我国攻克半导体材料世界难题

Core Viewpoint - Xi'an University of Electronic Science and Technology has successfully transformed the rough "island" interface in semiconductor manufacturing into an atomically smooth "film," significantly improving chip heat dissipation efficiency and device performance [1][2]. Group 1: Technical Breakthrough - The traditional semiconductor chip's crystal nucleation layer has uneven surfaces, severely affecting heat dissipation [2]. - The issue of heat accumulation, or "thermal bottlenecks," can lead to decreased chip performance or even device damage, a problem that has persisted since the 2014 Nobel Prize in related nucleation technology [2]. - The team pioneered the "ion implantation-induced nucleation" technology, converting the random growth process into a precise and controllable uniform growth, resulting in a new structural interface thermal resistance that is only one-third of the traditional methods [2]. Group 2: Performance Metrics - The GaN microwave power devices produced using this technology achieved output power densities of 42 watts/millimeter in the X-band and 20 watts/millimeter in the Ka-band, enhancing international records by 30%-40% [2].