我国攻克半导体材料世界难题

Core Viewpoint - The article discusses a breakthrough in semiconductor technology achieved by a research team from Xi'an University of Electronic Science and Technology, which addresses a long-standing issue in chip manufacturing related to heat dissipation and device performance enhancement [1][3]. Group 1: Technical Breakthrough - The research team has successfully transformed the rough "island" interface in chip manufacturing into an atomically smooth "thin film," significantly improving heat dissipation efficiency and device performance [1]. - The traditional semiconductor chip's crystal nucleation layer has uneven surfaces, which severely affects heat dissipation, leading to "thermal bottlenecks" that can degrade chip performance or even damage devices [3]. Group 2: Innovative Technology - The team pioneered the "ion implantation-induced nucleation" technology, which converts the random growth process into a precise and controllable uniform growth [4]. - The new structural interface exhibits thermal resistance that is only one-third of that of traditional methods, indicating a substantial improvement in heat management [4]. Group 3: Performance Metrics - The GaN microwave power devices produced using this technology achieved output power densities of 42 watts/mm in the X-band and 20 watts/mm in the Ka-band, enhancing international records by 30%-40% [4]. - This advancement implies that the same chip area can significantly increase detection range and allow communication base stations to cover greater distances while being more energy-efficient [4].