我国攻克半导体材料世界难题

Core Viewpoint - The article discusses a breakthrough in semiconductor technology achieved by a research team from Xi'an University of Electronic Science and Technology, which addresses a long-standing issue in chip manufacturing related to heat dissipation and performance enhancement [2][5]. Group 1: Breakthrough Technology - The research team has developed a novel "ion implantation induced nucleation" technology that transforms the rough "island" interfaces into atomically smooth "films," significantly improving heat dissipation efficiency [2][5]. - The new structure's thermal resistance is only one-third of that of traditional methods, marking a substantial advancement in semiconductor material integration [5]. Group 2: Performance Metrics - The GaN microwave power devices produced using this technology achieve output power densities of 42 watts/mm in the X-band and 20 watts/mm in the Ka-band, enhancing international records by 30% to 40% [5]. - This improvement allows for increased detection ranges with the same chip area, leading to more efficient and far-reaching communication base stations [5].