碳化硅黑马，首次制备出12英寸单晶样品，筹划扩产

Core Viewpoint - The article highlights the significant technological advancements made by Luxshare Technology in the field of silicon carbide (SiC) materials, particularly in the development of 12-inch semi-insulating SiC substrates, which positions the company as a key player in the future of the semiconductor industry [2][3]. Group 1: Technological Breakthroughs - Luxshare Technology's subsidiary, Hefei Luxshare Semiconductor Materials Co., has achieved a critical breakthrough in the semi-insulating SiC sector by successfully producing 12-inch single crystal samples, completing the entire process from crystal growth to substrate development [2]. - The company has mastered the coupling mechanisms of various process parameters in large-size crystal growth, ensuring stability and quality in the produced crystals, which are essential for high-performance power devices in sectors like new energy vehicles and photovoltaic storage [2]. Group 2: Product Development and Market Strategy - The newly developed semi-insulating SiC substrates exhibit excellent optical parameters and processing precision, meeting stringent standards for advanced applications such as AR glasses and high-performance RF devices [3]. - Luxshare Technology plans to expand its production capacity, focusing on the mass production of 8-inch conductive SiC substrates and 12-inch semi-insulating substrates to meet the growing market demand in various sectors, including new energy vehicles and consumer electronics [3][4]. Group 3: Industry Position and Partnerships - The company has signed a three-year minimum purchase agreement with BYD for 500,000 pieces, which helps address capacity utilization issues [4]. - Luxshare Technology's Hefei production facility is expected to ramp up production from 200,000 pieces per year to 300,000-500,000 pieces per year by 2026, aiming to become a leading supplier of SiC substrates in China [4].