DT新材料·2026-03-05 16:05Core Viewpoint - Silicon Carbide (SiC) is emerging as a critical wide-bandgap semiconductor material, playing a vital role in modern technology, particularly in enhancing energy efficiency and promoting sustainable development [4][10]. Group 1: Industry Dynamics - The SiC industry is experiencing rapid growth, characterized by accelerated industrial scaling, with substrate sizes transitioning from 6/8 inches to 12 inches, leading to significant increases in single-chip output and reductions in unit costs [5]. - The demand for SiC is driven by applications in electric vehicles (800V platforms) and upgrades in photovoltaic energy storage, indicating a shift from high-end applications to mass commercialization [5]. Group 2: Material Properties - SiC has a bandgap of approximately 3.26 eV, significantly higher than silicon's 1.12 eV, allowing it to operate stably under high temperature, high pressure, and high frequency conditions [7]. - The material exhibits high thermal conductivity (about 4.9 W/cm·K), high breakdown field strength (approximately 3 MV/cm), and high saturated electron drift velocity, making it suitable for various demanding applications [7]. Group 3: Manufacturing Processes - SiC can be produced through various methods, including traditional carbothermal reduction, Acheson process, and advanced techniques like chemical vapor deposition (CVD) and molecular beam epitaxy (MBE) [11][12][18]. - The growth of single crystals is primarily achieved through physical vapor transport (PVT), which is the most common method for producing high-purity SiC substrates [12]. Group 4: Applications - SiC is widely used in semiconductor devices, including power devices like MOSFETs and IGBTs, which are essential for high-voltage and high-frequency applications [19]. - In renewable energy, SiC enhances the efficiency of inverters in photovoltaic systems and supports smart grid technologies [17]. - The material is also critical in thermal management applications, serving as heat sinks for power modules, LEDs, and AI servers [21]. Group 5: Domestic Company Developments - Tianyu Advanced plans to launch the world's first 12-inch conductive substrate in November 2024 and aims to establish a full product matrix of 6/8/12 inches by 2025 [24]. - Nankai Crystal has showcased its 8-inch N-type SiC substrate at the ICSCRM exhibition in September 2025, indicating advancements in production capabilities [26]. - Lusheng Technology has achieved stable mass production of 6-inch SiC substrates with a yield rate of 95% and is progressing towards 8-inch substrate production [27].