Core Viewpoint - The article highlights the significant advancements made by Koyou Semiconductor in the 12-inch silicon carbide (SiC) wafer processing field, marking a new milestone in the industrialization of large-size SiC substrates in China [2][5]. Group 1: Breakthrough Achievements - Koyou Semiconductor has achieved dual breakthroughs in conductive and semi-insulating 12-inch SiC wafer processing, successfully establishing a complete core technology chain from crystal growth to wafer processing [2]. - Key advancements in processing include: - Equipment compatibility optimization allowing for a "zero modification" upgrade from 8-inch to 12-inch within the same main equipment, significantly reducing customer production line transformation costs [4]. - Development of a large-diameter thin-walled planetary gear structure using topology optimization, balancing high strength and lightweight for improved transmission stability [4]. - Improved non-standard involute tooth profile design to reduce engagement impact, suitable for low-speed, high-torque, high-precision processing scenarios [4]. - Introduction of a digital twin simulation platform for full-process simulation and validation in a virtual environment, shortening R&D cycles and reducing trial-and-error costs [4]. Group 2: Product Performance - Koyou Semiconductor's 12-inch SiC wafers have achieved: - Total Thickness Variation (TTV) ≤ 1.0μm - Local Flatness Variation (LTV) ≤ 0.5μm - Surface Roughness (Ra) ≤ 0.2nm - These specifications meet the high-quality substrate requirements for manufacturing high-power electronic devices and RF devices [4]. Group 3: Industry Implications - The 12-inch SiC wafers are seen as a crucial direction for the global third-generation semiconductor industry, offering larger single crystal wafer yields and lower unit costs [5]. - Koyou Semiconductor's breakthroughs are expected to break foreign technological barriers in large-size SiC processing and accelerate the large-scale application of high-performance SiC devices in sectors such as new energy vehicles, 5G communications, and smart grids [5].
国内12英寸SiC再获突破!
DT新材料·2026-03-10 16:12