氮化镓及功率半导体解读专家会

Summary of GaN and Power Semiconductor Expert Meeting Industry Overview - The GaN (Gallium Nitride) technology is gaining an advantage in high-power applications, particularly in the range of 1 kW to 10 kW, outperforming SiC (Silicon Carbide) in terms of cost-effectiveness. The market potential is expected to reach tens of billions or even hundreds of billions in the future, primarily for applications in AI servers with 800V power supply architecture [1][3]. Key Points GaN Technology and Market - GaN devices are particularly advantageous in the 800V DC power supply architecture, with 1,000W being the threshold where GaN shows lower losses compared to Si-based IGBTs (Insulated Gate Bipolar Transistors). Above 1,000W, GaN's cost-effectiveness becomes more pronounced, especially at the 3,000W level [1][3]. - The global leader in GaN manufacturing is Innoscience, holding approximately 30% market share, with products ranging from 100V to 1,200V. The company has been validated by NVIDIA but faces production limitations due to TSMC's process and advanced packaging technology [1][6][10]. Technical Aspects - GaN devices primarily utilize two technical routes: depletion-mode (D-mode) and enhancement-mode (E-mode), with E-mode being the mainstream choice due to its market applicability [12]. - GaN faces challenges in high-voltage applications, particularly concerning leakage current and heat generation. In contrast, SiC offers superior thermal conductivity and reliability in high-pressure scenarios [13][14]. Competitive Landscape - The current market for GaN is characterized by a lack of profitability among most manufacturers due to insufficient capacity and limited demand. For instance, Innoscience's annual production capacity is 15,000 wafers, while its design capacity could reach 65,000 to 78,000 wafers [15]. - The exit of TSMC from the GaN foundry business is seen as beneficial for mainland manufacturers, as it allows for cost reductions and market expansion opportunities [21]. Pricing Trends - The pricing of GaN and SiC devices is on a downward trend. For example, a 75A GaN device costs around 15 to 20 RMB, while SiC devices are priced significantly higher, making GaN a more attractive option in terms of performance and cost [5][16]. - The price of 8-inch GaN wafers has fallen below that of 6-inch wafers, enhancing their competitiveness in the market [22]. Future Outlook - The demand for power semiconductors is expected to grow significantly, driven by sectors such as renewable energy storage and data centers, with projections indicating a potential doubling of demand [19][20]. - The long-term outlook for GaN pricing will depend on increased market demand and production capacity, which could stabilize prices and lead to profitability for manufacturers [15]. Additional Insights - The competitive dynamics in the semiconductor market are shifting, with domestic companies poised to benefit from the exit of established players like Infineon and the sanctions on companies like Ansem Semiconductor, which could create opportunities for local firms to capture market share [17][24].