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锴威特(688693) - 苏州锴威特半导体股份有限公司投资者关系活动记录表(业绩说明会)

Group 1: Company Performance and Strategy - The company's performance has been primarily affected by the cyclical downturn in the semiconductor industry and increased R&D investments [2] - The company aims to focus on the power semiconductor industry and has adopted a dual-driven business development strategy involving power devices and power ICs [2] - The company is committed to becoming a high-quality power semiconductor supplier, emphasizing "independent innovation" and supporting domestic core chip production [2] Group 2: R&D Investments - As of Q3, the total R&D expenditure reached CNY 27.68 million, representing a 70.26% increase compared to the same period last year [3] - R&D investments accounted for 16.95% of the operating revenue in the first three quarters, an increase of 7.68 percentage points year-on-year [3] - The growth in R&D investment is attributed to increased focus on the development of new products such as power ICs and SiC MOSFETs [3] Group 3: Technical Capabilities - The company has achieved significant technical accumulation in ultra-high voltage planar MOSFETs, with a maximum voltage rating of 1700V [3] - The company possesses design capabilities for 650V-1700V SiC MOSFETs, enhancing its market competitiveness and ability to meet diverse customer needs [3] - The company is focused on the mass production and technological upgrade of third-generation semiconductor power devices in the future [4] Group 4: Market and Production Capacity - The company currently has normal order levels for Q4 [3] - The company operates under a Fabless model, focusing on the design, R&D, and sales of power semiconductors while outsourcing wafer manufacturing and packaging [3] - The company has a comprehensive supplier management system to ensure product quality meets requirements [3]