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中芯国际申请半导体结构及其形成方法专利,提高半导体结构的可靠性
Sou Hu Cai Jing·2025-05-20 01:26

Group 1 - Company Name: Semiconductor Manufacturing International Corporation (SMIC) has filed a patent for a semiconductor structure and its formation method, with publication number CN120018501A, applied on November 2023 [1] - The patent describes a semiconductor structure that includes a substrate, a floating gate layer, a cap layer, a gate insulating layer, and a control gate layer, with the cap layer having a higher dielectric constant than the gate insulating layer [1] - The innovation aims to improve the reliability and performance of the semiconductor structure by reducing charge accumulation at the corners of the floating gate layer through electrostatic induction effects [1] Group 2 - SMIC Beijing was established in 2002, focusing on the manufacturing of computers, communications, and other electronic devices, with a registered capital of 100 million USD [2] - SMIC Shanghai was founded in 2000, also engaged in the same industry, with a registered capital of 244 million USD [2] - Both companies have extensive patent portfolios, with each holding around 5000 patent records, and have participated in numerous bidding projects [2]