Group 1 - Company Name: Semiconductor Manufacturing International Corporation (SMIC) has filed a patent for a semiconductor structure and its formation method, with publication number CN120237113A, applied on December 2023 [1] - The patent describes a semiconductor structure that includes a substrate with interconnect through holes, first and second electrode layers, a dielectric layer, and a conductive layer, which enhances processing efficiency and yield [1] - The structure aims to reduce the thickness of the isolation layer within the interconnect through holes and prevent cracking of the conductive layer on the substrate's second surface, significantly improving the semiconductor structure's yield [1] Group 2 - SMIC Beijing was established in 2002, with a registered capital of $100 million, and has participated in 52 bidding projects and holds 5000 patent records [2] - SMIC Beijing has 226 administrative licenses and has made one external investment [2] - SMIC Shanghai was founded in 2000, with a registered capital of $244 million, and has participated in 127 bidding projects, holding 5000 patent records and 442 administrative licenses [2]
中芯国际申请半导体结构及其形成方法专利,极大提升半导体结构的良率