Sou Hu Cai Jing·2025-07-04 04:40Core Viewpoint - Semiconductor manufacturing companies, specifically SMIC, are advancing their technology by applying for a new patent related to semiconductor structure formation, which aims to improve product yield and reduce sensitivity to environmental impurities [1][2]. Group 1: Patent Application - SMIC has applied for a patent titled "Method for Forming Semiconductor Structure," with publication number CN120261287A, filed on January 2024 [1]. - The patent describes a process that includes forming a silicon layer on a substrate, followed by a metal layer, and involves multiple heat treatments and acid washes to create a metal silicide layer [1]. - The new method enhances the growth of metal silicide by minimizing the impact of environmental factors, thus improving product yield [1]. Group 2: Company Overview - SMIC Beijing was established in 2002, focusing on the manufacturing of computers, communications, and other electronic devices, with a registered capital of 100 million USD [2]. - SMIC Shanghai was founded in 2000, also specializing in similar manufacturing sectors, with a registered capital of 244 million USD [2]. - Both companies have significant patent portfolios, with each holding around 5,000 patents, and have participated in numerous bidding projects [2].