我国碳化硅激光剥离技术实现重大突破，单片切割损耗降至75微米以下

Core Insights - The Shenzhen Platform of the National Third Generation Semiconductor Technology Innovation Center has achieved a milestone in silicon carbide (SiC) substrate processing, significantly reducing cutting loss and costs [1] Group 1: Technological Advancements - The team developed an automated laser peeling system that reduced cutting loss from 280-300 micrometers to below 75 micrometers, resulting in a 26% decrease in single wafer costs [1] - By December 2024, the lab achieved a total loss of ≤120 micrometers and a cutting time of 30 minutes, reaching a leading level domestically [1] Group 2: Future Projections - By June 2025, the lab aims to achieve a total loss of ≤75 micrometers and a cutting time of 20 minutes, further reducing costs by approximately 26% and tripling production capacity [4] - The increasing demand for silicon carbide in sectors like electric vehicles and photovoltaics will drive the maturation of domestic laser peeling technology, enhancing the autonomy of the supply chain [4]