中国科学院金属研究所团队持续提高晶体管性能 晶体管“功耗墙”，这样突破（硬核科技的创新故事）

Core Viewpoint - The research team from the Institute of Metal Research, Chinese Academy of Sciences, has made significant advancements in the development of hot carrier transistors, showcasing their potential for low-power, multifunctional applications in high-performance integrated circuits [1][2]. Group 1: Research Breakthrough - The team has identified and addressed the "power wall" as a major challenge in enhancing transistor performance, alongside the "size wall" and "storage wall" [1]. - The innovative approach involves using graphene and germanium to create a Schottky junction, which allows for the injection of high-energy carriers, leading to a significant increase in current and the emergence of negative differential resistance [2]. Group 2: Device Performance - The new type of transistor can achieve a current increase of one order of magnitude with less than 1 millivolt of voltage, compared to traditional transistors that require at least 60 millivolts [3]. - The device demonstrates notable negative differential resistance at room temperature, indicating its promising applications in low-power and multifunctional integrated circuits [3]. Group 3: Collaboration and Future Directions - The research team collaborates with over 600 enterprises across various industries, including equipment manufacturing, steel, aerospace, and energy, to provide critical materials and technical support [3]. - The team emphasizes the importance of accumulating research results to form a theoretical framework or proprietary technology for potential technology transfer [3].