Sou Hu Cai Jing·2025-07-25 01:55Group 1 - Company "SMIC International Integrated Circuit Manufacturing (Beijing) Co., Ltd." applied for a patent titled "Memory Structure and Its Formation Method" with publication number CN120379259A, filed on January 2024 [1] - The patent describes a memory structure that includes a substrate, a channel structure made of transition metal sulfides, and a floating gate made of graphene material, which enhances performance and reduces storage area [1] - The use of transition metal sulfides as channel material and graphene for the floating gate mitigates short-channel effects and leakage issues, improving the overall performance of the memory structure [1] Group 2 - "SMIC International Integrated Circuit Manufacturing (Beijing) Co., Ltd." was established in 2002 with a registered capital of 100 million USD, focusing on the manufacturing of computers, communications, and other electronic devices [2] - "SMIC International Integrated Circuit Manufacturing (Shanghai) Co., Ltd." was founded in 2000 with a registered capital of 244 million USD, also engaged in the same industry [2] - The Beijing subsidiary has participated in 52 bidding projects and holds 5000 patent records, while the Shanghai subsidiary has engaged in 127 bidding projects and also possesses 5000 patent records [2]