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中芯国际申请半导体结构及其形成方法专利,使得硅鳍片和硅锗鳍片深度一致
Sou Hu Cai Jing·2025-07-29 12:46

Core Viewpoint - Semiconductor Manufacturing International Corporation (SMIC) has applied for a patent related to semiconductor structures and their formation methods, indicating ongoing innovation in the semiconductor industry [1]. Company Summary - SMIC was established in 2000 and is located in Shanghai, primarily engaged in the manufacturing of computers, communications, and other electronic devices [1]. - The company has a registered capital of 244 million USD [1]. - SMIC has made investments in 4 companies and participated in 127 bidding projects [1]. - The company holds 150 trademark records and 5000 patent records, along with 451 administrative licenses [1]. Patent Details - The patent application, titled "Semiconductor Structure and Its Formation Method," was filed on January 2024, with the publication number CN120388891A [1]. - The semiconductor structure includes a semiconductor substrate with two regions: one with a silicon layer and the other with a silicon-germanium layer, both surfaces being flush [1]. - Fins are located in both regions, with equal heights, where the fins in the first region consist of part of the substrate and the silicon layer, while those in the second region consist of part of the substrate and the silicon-germanium layer [1].