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中芯国际申请半导体结构及其形成方法专利,提升半导体结构的制程效率
Sou Hu Cai Jing·2025-08-02 09:03

Group 1 - Company Name: Semiconductor Manufacturing International Corporation (SMIC) has filed a patent for a semiconductor structure and its formation method, with publication number CN120413548A, applied on January 2024 [1] - The patent describes a method that includes forming a first part with at least a first metal layer, a dielectric layer, and a first interconnect structure, and a second part with a device structure, a second metal layer, and a second interconnect structure [1] - The bonding of the first and second parts allows for overlapping projection areas of the first and second metal layers, ensuring electrical connection between the first and second interconnect structures [1] Group 2 - SMIC Beijing was established in 2002 with a registered capital of 100 million USD, focusing on manufacturing in the computer, communication, and other electronic device sectors [2] - SMIC Shanghai was founded in 2000 with a registered capital of 244 million USD, also engaged in the same manufacturing sectors [2] - SMIC Beijing has participated in 52 bidding projects and holds 5000 patent records, while SMIC Shanghai has been involved in 127 bidding projects and also holds 5000 patent records [2]