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中芯国际申请半导体结构及其形成方法专利,降低在第二区的栅极层中产生缝隙、空洞等缺陷的概率
Sou Hu Cai Jing·2025-08-09 11:36

Group 1 - The core viewpoint of the news is that Semiconductor Manufacturing International Corporation (SMIC) has applied for a patent related to semiconductor structures and their formation methods, indicating ongoing innovation in the semiconductor industry [1][3] - The patent application, published as CN120456589A, was filed on February 2024 and describes a semiconductor structure that includes a substrate with two regions having different device operating voltages [1] - The structure features fins located on the substrate, an isolation layer surrounding the fins, and two gate dielectric layers with different thicknesses, showcasing advancements in semiconductor technology [1] Group 2 - SMIC was established in 2000 and is based in Shanghai, primarily engaged in the manufacturing of computers, communications, and other electronic devices [2] - The company has a registered capital of 244 million USD and has made investments in four enterprises, participated in 127 bidding projects, and holds 5000 patent records [2] - Additionally, SMIC has 150 trademark records and possesses 451 administrative licenses, reflecting its extensive operational footprint in the semiconductor industry [2]