我国磷化铟领域获重要技术突破 云南鑫耀6英寸磷化铟单晶片量产在即

Core Viewpoint - Jiufengshan Laboratory has achieved a significant technological breakthrough in the field of Indium Phosphide (InP) materials, successfully developing a 6-inch InP-based PIN structure detector and FP structure laser epitaxial growth process, with key performance indicators reaching an internationally leading level [1] Group 1: Technological Breakthrough - The breakthrough marks the first domestic achievement in the large-size InP material preparation field, realizing a coordinated application from core equipment to key materials [1] - The industry has been primarily limited to 3-inch processes, with high costs preventing the meeting of explosive growth in downstream applications [1] - Jiufengshan Laboratory has overcome the challenges of large-size epitaxial uniformity control, laying the foundation for the large-scale preparation of 6-inch InP optical chips [1] Group 2: Industry Impact - The recent technological breakthrough is expected to significantly promote the collaborative development of China's compound semiconductor industry chain [1] - Yunnan Xinyao, a partner in the 6-inch InP substrate development, has achieved key technological breakthroughs in the industrialization of high-quality 6-inch InP single crystals, with mass production imminent [1] - Yunnan Xinyao is a subsidiary of Yunnan Zheye (002428), focusing on the research and production of semiconductor materials [1]