晶合集成申请一种沟槽型MOSFET器件的制备方法及MOSFET器件专利，提高沟槽型MOSFET的耐压性能

Group 1 - The core viewpoint of the news is that Hefei Jinghe Integrated Circuit Co., Ltd. has applied for a patent for a method of preparing trench MOSFET devices, indicating its focus on innovation in semiconductor technology [1] - The patent application was published under the number CN120529608A, with the application date being July 2025 [1] - The patent describes a method that involves forming a trench in the substrate, creating a first gate dielectric layer, and stacking a first gate electrode layer, followed by a second gate dielectric layer and a second gate electrode layer [1] Group 2 - Hefei Jinghe Integrated Circuit Co., Ltd. was established in 2015 and is located in Hefei City, primarily engaged in the manufacturing of computers, communications, and other electronic devices [2] - The company has a registered capital of approximately 200.61 million RMB [2] - The company has made investments in 9 enterprises, participated in 630 bidding projects, and holds 1200 patent records along with 41 trademark records [2]