Xuan Gu Bao·2025-09-07 23:16Group 1 - Nvidia plans to replace silicon with silicon carbide (SiC) in the intermediate substrate material of its next-generation Rubin processors to enhance performance, with SiC expected to be integrated by 2027 [1] - TSMC is also planning to use 12-inch single crystal silicon carbide for heat dissipation substrates, replacing traditional materials like alumina and sapphire [1] - Silicon carbide has a thermal conductivity of 500 W/mK, significantly higher than silicon's thermal conductivity of approximately 150 W/mK, indicating its potential in high-heat environments [1] Group 2 - As Nvidia's GPU chips increase in power, integrating multiple chips into a silicon interlayer will raise thermal performance requirements, making SiC interlayers a promising solution to reduce heat sink size and optimize overall packaging [1] - The application potential of silicon carbide in high-end computing chips is not fully realized, suggesting future growth opportunities in advanced packaging and other segments [1] - Silicon carbide is expected to improve heat dissipation efficiency when used in heat dissipation substrates, as current ceramic materials have lower thermal conductivity than single crystal silicon carbide [1] Group 3 - Companies like 瑞纳智能, 错威特, and 宇环数控 are actively advancing silicon carbide technology and products, indicating a growing interest in this material within the semiconductor industry [3][4][5] - The market for silicon carbide devices is expanding, with various companies like 得润电子 and 甘化科工 achieving significant milestones in production and development of SiC components [4][5][6] - The overall trend in the semiconductor industry is shifting towards third-generation semiconductor materials, particularly silicon carbide, which is being adopted for various applications including automotive and power electronics [4][5][6]