赛晶半导体与湖南三安战略携手，共促SiC模块技术与产业化突破

Core Viewpoint - The strategic partnership between SaiJing Semiconductor and Hunan Sanan Semiconductor aims to leverage their complementary strengths in the wide bandgap semiconductor industry, focusing on the research and industrial application of silicon carbide (SiC) and gallium nitride (GaN) technologies [1][3]. Group 1: Partnership Details - The partnership was formalized through a signing ceremony held at Hunan Sanan's headquarters, emphasizing the full vertical integration capabilities of Hunan Sanan in the SiC chip production process [1]. - The collaboration will focus on seven core areas: capacity assurance, price competitiveness, technical support, market synergy, supply chain optimization, sustainable development, and international cooperation [2]. Group 2: Collaborative Mechanisms - A long-term cooperation mechanism will be established, including regular high-level meetings, special working groups, and an information-sharing platform, with the agreement set to last for five years [2]. - Hunan Sanan will prioritize capacity assurance for SaiJing Semiconductor's needs and both companies will jointly assess market potential and develop capacity expansion plans [2]. Group 3: Technological and Market Focus - The partnership aims to enhance performance, reliability, and power density of power modules through joint efforts in key technologies such as high-temperature packaging materials and low-inductance module design [3]. - The collaboration is expected to accelerate the development and commercialization of next-generation SiC modules, providing competitive solutions for sectors like electric vehicles, photovoltaic energy storage, and industrial motors [3]. Group 4: Industry Impact - This strategic cooperation signifies a critical breakthrough for China's wide bandgap semiconductor industry, moving towards self-sufficiency and global competitiveness [3]. - The integration of Hunan Sanan's manufacturing capabilities with SaiJing Semiconductor's expertise in module packaging and market application is anticipated to significantly enhance the domestic production level of high-end power semiconductors [3].