全球新增一座8英寸SiC外延片厂房竣工，预计今年起量产

Core Insights - Resonac has completed the construction of a new silicon carbide (SiC) epitaxial wafer production facility in Higashine City, Yamagata Prefecture, with an investment of 30.9 billion yen (approximately 1.5 billion RMB) aimed at upgrading four SiC factories [1][3] - The new facility will focus on producing 8-inch (200mm) SiC epitaxial wafers to increase chip yield and reduce costs, addressing the growing demand in electric vehicles, renewable energy, and industrial equipment markets [3] - The project is part of Japan's key material supply security plan under the Economic Security Promotion Law, with Resonac eligible for a government subsidy of up to 10.3 billion yen (approximately 500 million RMB) to expand SiC substrate and epitaxial wafer production capacity [5] Production Capacity Goals - Resonac aims to achieve an annual production capacity of 117,000 SiC substrates (equivalent to 6-inch calculations) by April 2027 and increase the annual production capacity of SiC epitaxial wafers to 288,000 pieces (also equivalent to 6-inch calculations) by May 2027 [5] Strategic Initiatives - In September 2023, Resonac announced the formation of a co-creation alliance named "JOINT3" with 27 global semiconductor supply chain companies, focusing on developing panel-level organic interlayer technology to meet the rising demand for high-performance semiconductor packaging driven by generative AI and autonomous vehicles [6] - Resonac has signed a comprehensive cooperation agreement with Yokohama National University to jointly develop next-generation semiconductor materials, advance packaging technologies (such as 3D packaging), and promote sustainable manufacturing processes, accelerating material and technology development in semiconductor downstream processes [6]