三星、海力士存储价格上调30%，隔夜美股存储龙头也集体爆发

Group 1 - The core viewpoint of the articles indicates a significant price increase in DRAM and NAND flash memory, with Samsung and SK Hynix raising prices by up to 30% in Q4, signaling the start of a price upcycle in response to supply-demand imbalances [1] - Analysts predict that the shortage of memory products may persist for three to four years, driven by substantial investments in AI servers, ongoing memory upgrades in general servers, and the rising demand for edge AI devices [1] - The current cycle is expected to be stronger and longer than previous ones, influenced by large investments in AI server fields, memory upgrades for general servers to support AI applications, and the proliferation of edge AI functionalities in smartphones and PCs [1] Group 2 - The demand for Server DRAM is increasing due to the recovery of cloud service provider (CSP) construction momentum, with sustained demand for DDR5 products and expanding HBM demand [2] - YoleGroup forecasts that the HBM market will maintain a compound annual growth rate of 33% until 2030, with its revenue expected to exceed 50% of the total revenue of the DRAM market by that time [2] - Companies mentioned in relation to this growth include Zhaoyi Innovation, Baiwei Storage, and Purun Co., Ltd. [3]