国博电子：与国内头部终端厂商共同研发的硅基氮化镓功放芯片已在国内头部终端厂商完成认证

Core Viewpoint - The company has developed a silicon-based gallium nitride power amplifier chip in collaboration with leading domestic terminal manufacturers, filling a gap in the industry for RF applications in terminal devices [1] Group 1: Product Development - The silicon-based gallium nitride power amplifier chip is optimized for mobile and other terminal applications [1] - The product has completed certification with major domestic terminal manufacturers and has achieved mass production with over 1 million units delivered [1] Group 2: Market Impact - The new product is expected to replace existing gallium arsenide terminal power amplifier products [1] - There is potential for the product series to be promoted across all frequency bands and scenarios in the terminal RF power amplifier field, providing a second growth curve for the company's revenue [1]