TSMC(US:TSM) Jing Ji Ri Bao·2025-11-04 23:48Core Insights - SK Hynix reveals its new generation memory technology blueprint aimed at overcoming the "memory wall" barrier in the AI era, with a goal to become a "full-line AI memory creator" [1][2] - The company emphasizes that memory is evolving from a standard component to a core value product in the AI industry, highlighting the need for improved memory performance to keep pace with processor advancements [1] Group 1: AI Memory Technology - SK Hynix's new strategy includes three main initiatives: Custom HBM, AI DRAM (AI-D), and AI NAND (AI-N) [1][2] - AI DRAM is further divided into three categories: AI-D O (Optimization) focuses on low power and high performance, AI-D B (Breakthrough) aims to overcome the "memory wall" with ultra-high capacity and flexible allocation, and AI-D E (Expansion) seeks to broaden DRAM applications beyond data centers to robotics, mobility, and industrial automation [2] - For AI NAND, SK Hynix is preparing three next-generation storage solutions: AI-N P (Performance), AI-N B (Bandwidth), and AI-N D (Density) [2] Group 2: Collaboration with TSMC - SK Hynix is closely collaborating with TSMC on the next generation of HBM base dies, indicating TSMC's growing importance in the AI era [2] - The company is a member of TSMC's "3D Fabric Alliance" established in 2022, and both parties are actively enhancing their cooperation, having signed a memorandum of understanding for HBM4 development last year [2]