Core Viewpoint - Lianang Microelectronics (605358.SH) announced an investment agreement for a new project to produce 1.8 million pieces of 12-inch heavily doped substrate wafers, with a total investment of 2.262 billion yuan, primarily to meet the growing demand in high-end power device markets [1][2]. Group 1 - The project will be implemented by the company's subsidiary, Jinrui Hong Microelectronics, within its existing factory [1]. - The total planned investment for the project is 2.262 billion yuan, with 2.196 billion yuan allocated for fixed asset investment [1]. - The new production capacity will enhance the company's ability to produce heavily doped silicon wafers, optimizing product structure and increasing product variety [2]. Group 2 - Jinrui Hong Microelectronics focuses on the production of 12-inch heavily doped silicon wafers, which are essential for high-end power devices used in various applications, including AI servers, energy storage inverters, and automotive electronics [2]. - The existing production capacity for heavily doped silicon wafers is nearing full capacity, necessitating this expansion to meet market demand, particularly for specialized specifications like heavily doped arsenic and phosphorus wafers [2]. - The new project will complement the existing production of 1.8 million pieces of 12-inch semiconductor silicon epitaxial wafers, creating a synergistic effect in the supply chain [2].
立昂微(605358.SH)子公司拟投建年产180万片12英寸重掺衬底片项目 计划总投资22.62亿元