| 代码 | 名称 | | 涨幅% ↓ | 总市值 | 年初至今涨幅% | | --- | --- | --- | --- | --- | --- | | 688234 | 天岳先进 | | 12.53 | 505亿 | 17.32 | | 688727 | 恒坤新材 | 1 | 8.44 | 312亿 | 45.28 | | 301536 | 星宸科技 | 中 | 8.20 | 296亿 | 17.13 | | 688270 | 臻福科技 | 4 | 7.94 | 420亿 | 60.56 | | 688584 | 上海合晶 | 长 | 6.44 | 167亿 | 14.59 | | 688729 | 吃唐股份 | | 6.04 | 841亿 | 16.26 | | 688691 | 灿芯股份 | | 5.58 | 170亿 | 38.75 | | 301629 | 矽电股份 | 1 | 5.22 | 146亿 | 59.88 | | 688652 | 京仪装备 | -06- | 5.18 | 223亿 | 34.80 | | 605358 | 立昂微 | 東 | 5.15 | 293亿 | 25.45 | ...

证券日报网讯 1月15日，立昂微在互动平台回答投资者提问时表示，立昂东芯拥有行业内首个将栅长 0.15um的功率管、低噪声晶体管、PN二极管、E/D逻辑及射频开关集成于单芯片的商业化以及可量产工 艺技术，该技术融合了独立优化的栅长为0.15um的Emode低噪声pHEMT与0.15umDmode功率pHEMT， 实现同芯片内业界性能领先的功率放大器和低噪声放大器。该技术以及其它多种0.15、0.25um的 GaAspHEMT工艺技术和GaNHEMT工艺技术，既可应用于卫星的通信领域，也可应用于地面通信终端 通信。目前应用于低轨卫星通信芯片已实现大批量出货，应用于地面通信终端的芯片已通过客户验证。 （编辑 任世碧） ...

格隆汇1月12日丨立昂微(605358.SH)在投资者互动平台表示，在车载雷达领域，立昂东芯VCSEL芯片产 品已用于智能驾驶中的激光雷达产品并已实现大规模出货，其中二维可寻址大功率VCSEL工艺技术， 成为全球首家量产车规级激光雷达VCSEL芯片的制造商，产品已应用于智能驾驶、人形机器人、割草 机器人等领域。4D毫米波雷达和激光雷达是两种不同的传感器技术，它们在原理、性能、应用场景和 成本等方面存在区别，公司暂无应用于车载4D毫米波雷达的产品。 ...

格隆汇1月12日丨立昂微(605358.SH)在互动平台表示，在车载雷达领域，立昂东芯VCSEL芯片产品已用 于智能驾驶中的激光雷达产品并已实现大规模出货，其中二维可寻址大功率VCSEL工艺技术，成为全 球首家量产车规级激光雷达VCSEL芯片的制造商，产品已应用于智能驾驶、人形机器人、割草机器人 等领域。4D毫米波雷达和激光雷达是两种不同的传感器技术，它们在原理、性能、应用场景和成本等 方面存在区别，公司暂无应用于车载4D毫米波雷达的产品。 ...

格隆汇1月12日丨立昂微(605358.SH)在互动平台表示，立昂东芯pHEMT工艺可将栅长0.15um的功率 管、低噪声晶体管、PN二极管、E/D逻辑及射频开关集成于单芯片并实现商业化量产，目前已用于低轨 卫星通信领域并已实现大批量出货，实现包括功率放大器（PA），低噪声放大器（LNA）以及射频开 关（SW）等功能。此外，立昂东芯的氮化镓射频芯片工艺也将实现卫星领域应用作为目标。 ...

格隆汇1月12日丨立昂微(605358.SH)在投资者互动平台表示，在车载雷达领域，立昂东芯VCSEL芯片产 品已用于智能驾驶中的激光雷达产品并已实现大规模出货，其中二维可寻址大功率VCSEL工艺技术， 成为全球首家量产车规级激光雷达VCSEL芯片的制造商，产品已应用于智能驾驶、人形机器人、割草 机器人等领域。4D毫米波雷达和激光雷达是两种不同的传感器技术，它们在原理、性能、应用场景和 成本等方面存在区别，公司暂无应用于车载4D毫米波雷达的产品。 ...

格隆汇1月12日丨立昂微(605358.SH)在互动平台表示，立昂东芯pHEMT工艺可将栅长0.15um的功率 管、低噪声晶体管、PN二极管、E/D逻辑及射频开关集成于单芯片并实现商业化量产，目前已用于低轨 卫星通信领域并已实现大批量出货，实现包括功率放大器（PA），低噪声放大器（LNA）以及射频开 关（SW）等功能。此外，立昂东芯的氮化镓射频芯片工艺也将实现卫星领域应用作为目标。 ...

格隆汇1月12日丨立昂微(605358.SH)在互动平台表示，在车载雷达领域，立昂东芯VCSEL芯片产品已用 于智能驾驶中的激光雷达产品并已实现大规模出货，其中二维可寻址大功率VCSEL工艺技术，成为全 球首家量产车规级激光雷达VCSEL芯片的制造商，产品已应用于智能驾驶、人形机器人、割草机器人 等领域。4D毫米波雷达和激光雷达是两种不同的传感器技术，它们在原理、性能、应用场景和成本等 方面存在区别，公司暂无应用于车载4D毫米波雷达的产品。 ...

Group 1 - The company has decided to extend the completion date of the "Annual Production of 1.8 Million 12-inch Semiconductor Silicon Epitaxial Wafer Project" to December 2027 due to market conditions and demand fluctuations [3][6][8] - The company raised a total of RMB 339 million through the issuance of convertible bonds, with a net amount of RMB 337.81 million after deducting issuance costs [1][2] - As of December 31, 2025, the cumulative investment from the raised funds amounted to RMB 286.99 million, excluding issuance costs [2] Group 2 - The project was initially delayed to May 2026 due to weak market conditions affecting the semiconductor industry, leading to underutilization of existing production capacity [3][5] - The construction of the new epitaxial workshop has reached the roofing stage and is expected to be completed by August 2026, followed by equipment installation and debugging [6][7] - The company has observed a recovery in the semiconductor silicon wafer industry since Q1 2025, with increased demand for high-end power devices, prompting a faster project construction pace [7] Group 3 - The board of directors approved the project delay during a meeting on January 9, 2026, and the decision followed necessary procedures [9][42] - The company has implemented a prudent investment strategy to protect shareholder interests and mitigate investment risks [5][8] - The company will continue to monitor market conditions and adjust the project implementation pace accordingly to ensure efficient use of raised funds [7][8]

Core Viewpoint - The announcements from the company reveal the completion of the 6-inch silicon polishing wafer project and the second delay of the 12-inch semiconductor silicon epitaxial wafer project, highlighting challenges in the semiconductor industry and adjustments in project timelines. Group 1: 6-inch Silicon Polishing Wafer Project - The 6-inch silicon polishing wafer project has officially completed as of January 9, 2026, with a total investment of 124,739.68 million yuan against a promised amount of 125,000 million yuan, resulting in a surplus of 1,840.24 million yuan [2] - The surplus funds will be fully allocated to the 12-inch semiconductor silicon epitaxial wafer project, as the surplus is below 5% of the committed investment, thus not requiring board approval [2] Group 2: 12-inch Semiconductor Silicon Epitaxial Wafer Project - The timeline for the 12-inch semiconductor silicon epitaxial wafer project has been postponed from May 2026 to December 2027, marking the second delay after an initial postponement from April 2024 [3] - The project has a planned investment of 113,000 million yuan, with 62,263.61 million yuan already invested, reflecting a progress rate of 55.10% as of December 31, 2025 [3] - The delay is attributed to the downturn in the semiconductor silicon wafer industry, leading to underutilization of existing capacity and increased profitability pressure, prompting the company to slow down construction and equipment procurement [3] Group 3: Industry Environment and Future Outlook - Since the first quarter of 2025, the semiconductor silicon wafer industry has seen a recovery in demand, with significant increases in order volumes and shipment quantities, particularly for high-end power devices [4] - The company has accelerated the construction pace of its projects since the second half of 2025 and plans to adjust the construction schedule dynamically based on market conditions [4]