天岳先进:半绝缘碳化硅衬底是GaN-on-SiC技术路线核心基础材料

Core Viewpoint - Tianyue Advanced (688234.SH) is actively promoting industrial cooperation in the robotics field, emphasizing its commitment to deepening its layout in silicon carbide (SiC) materials and related applications [1][4]. Group 1: Technology and Product Development - SiC conductive devices have advantages in frequency and heat dissipation, making them suitable for high-performance applications [1]. - The company highlights the distinction between GaN-on-Si and GaN-on-SiC technologies, noting that GaN-on-Si is primarily used in consumer electronics and mid-to-low voltage power devices due to its cost advantages, while GaN-on-SiC combines high-frequency performance with superior thermal conductivity, suitable for high-end power applications [3]. - The core material for the GaN-on-SiC technology route is semi-insulating silicon carbide substrates, which are essential for high-frequency and high-power devices in 5G communications and radar applications [3]. Group 2: Market Opportunities and Applications - Emerging industries such as humanoid robots and low-altitude economy are increasing the demand for high-performance power devices, which may provide new growth opportunities for the company [3][4]. - The company is exploring more collaboration opportunities with high-end power and RF device customers to capitalize on market opportunities arising from the next round of technological upgrades and application expansions [4].