国际商业机器公司申请用于单片堆叠器件的多重栅极电介质专利，改进堆叠器件中每一个堆叠器件的性能以及可靠性

Group 1 - The core point of the article is that IBM has applied for a patent for a semiconductor structure that includes multiple stacked devices with different gate dielectrics to improve performance and reliability [1]. Group 2 - The patent application is titled "Multiple Gate Dielectrics for Stacked Devices" and was published under the number CN121286123A, with an application date of June 2024 [1]. - The design aims to enhance the performance of each stacked device within the semiconductor structure [1].