中芯国际申请半导体结构及其形成方法专利,有利于提高半导体结构的工作性能
Sou Hu Cai Jing·2026-02-09 03:32

Group 1 - The core point of the article is that Semiconductor Manufacturing International Corporation (SMIC) has applied for a patent for a semiconductor structure and its formation method, which aims to improve power supply efficiency and enhance the performance of semiconductor structures [1]. Group 2 - The patent application, titled "Semiconductor Structure and Its Formation Method," was published with the number CN121487311A and was filed on August 2024 [1]. - The semiconductor structure includes a substrate, a channel layer structure suspended above the substrate, a gate structure crossing the channel layer structure, source and drain doping layers on either side of the gate structure, and a source and drain plug that connects electrically with the doping layers [1]. - SMIC was established in 2000 and is located in Shanghai, primarily engaged in the manufacturing of computers, communications, and other electronic devices, with a registered capital of 244 million USD [1]. - According to data analysis, SMIC has invested in four companies, participated in 129 bidding projects, and holds 150 trademark records and 5000 patent records, along with 447 administrative licenses [1].

SMIC-中芯国际申请半导体结构及其形成方法专利,有利于提高半导体结构的工作性能 - Reportify