技术新突破 | 海目芯微成功研制12英寸碳化硅单晶晶锭

Core Viewpoint - The company has achieved a significant milestone by successfully developing a 12-inch silicon carbide (SiC) single crystal ingot, demonstrating full autonomy in the technology chain for 6, 8, and 12-inch crystal growth [1][9]. Group 1: Technological Advancements - The company has controlled the defect rate of the 8-inch SiC crystal growth process to a stable value and has now made breakthroughs in 12-inch crystal growth technology [1][9]. - By enhancing thermal field lifespan and reducing power consumption, the company has significantly lowered the cost of crystal growth [3][11]. - The successful development of the 12-inch ingot involved overcoming complex internal thermal gradients and radial temperature fields, ensuring high-quality SiC single crystal production [5][13]. Group 2: Strategic Focus - The company is focusing on addressing core challenges in crystal growth and substrate processing to break through technological barriers and build core competitiveness through continuous innovation [7][15]. - The company aims to drive sustainable development by leveraging its technological innovations and industrial advancements [15]. Group 3: Company Overview - Shenzhen Haimeixin Microelectronics Equipment Technology Co., Ltd. was established in March 2021 and is a subsidiary of Haimeixing Laser [8][16]. - The company has a strategic layout with a headquarters in Shenzhen and production bases in Chengdu and Jiangxi, covering 14,000 square meters for efficient equipment mass production [16]. - The company operates in four core areas: ultra-fast laser equipment for display panels, micron-level lithography equipment, third-generation semiconductor (SiC) equipment, and other laser equipment [16].