天岳先进：2024年11月，公司向客户成功交付高质量低阻P型碳化硅衬底

Core Viewpoint - Tianyue Advanced has successfully delivered high-quality low-resistance P-type silicon carbide substrates to customers, marking a significant step into higher voltage fields represented by smart grids [1] Group 1: Company Developments - The delivery of high-quality low-resistance P-type silicon carbide substrates is expected to accelerate the development of high-performance SiC-IGBTs, facilitating the localization of high-end ultra-high voltage power devices [1] - The company continues to strengthen its technological advantages in large-size production technology, zero-defect technology, P-type substrate technology, and liquid-phase technology, which will enhance material performance and product upgrades [1] Group 2: Industry Implications - The advancements in silicon carbide substrates are anticipated to promote applications in various emerging fields, driven by the improvements in material performance and product innovation [1]