下一代DRAM，关注什么？

Core Insights - The High Bandwidth Memory (HBM) market is experiencing exponential growth driven by the surge in artificial intelligence workloads and high-performance computing applications, with HBM bit shipments expected to grow by 187% year-on-year in 2023 and 193% in 2024 [1] - Global HBM revenue is projected to increase from $17 billion in 2024 to $98 billion by 2030, with a compound annual growth rate (CAGR) of 33% [1] - HBM's revenue share in the DRAM market is expected to expand from 18% in 2024 to 50% by 2030, highlighting its strategic importance in AI data centers and advanced computing platforms [1] Market Leaders and Competition - SK Hynix is currently leading the HBM market, having started mass production of 12Hi HBM3E by the end of 2024 and initiating customer sample supply of the next-generation 12Hi HBM4 (36GB) in early 2025 [5] - Samsung is accelerating its market position by developing its HBM product portfolio and improving DRAM designs, with plans to supply samples of HBM4 products in 2025 [8] - Micron is entering the market directly with HBM3E in 2024, targeting NVIDIA's H200 GPU, and aims to ramp up production to 60,000 wafers per minute by the end of 2025 [8] Industry Trends and Innovations - Despite challenges in miniaturization, planar DRAM is expected to continue evolving at the 0c/0d node (2033-2034), leveraging a combination of architecture and process innovations [10] - The industry is currently relying on the 6F² DRAM cell structure, which is projected to dominate all commercial products by 2025 [10] - A transition to 3D DRAM architecture is anticipated post-0c/0d node, with all major DRAM manufacturers actively exploring various architectural paths for 3D DRAM integration [13]