Micron Technology(US:MU) 半导体行业观察·2025-04-20 03:50Core Viewpoint - The article discusses Micron's strategic move to establish a dedicated High Bandwidth Memory (HBM) business unit in response to the growing demand for artificial intelligence, aiming to close the gap with HBM leader SK Hynix [1][2]. Group 1: Organizational Changes - Micron has created a new organizational structure consisting of four departments: Cloud Memory Business Unit (CMBU), Core Data Center Business Unit (CDBU), Mobile and Client Business Unit (MCBU), and Automotive and Embedded Business Unit (AEBU) [1]. - The CMBU will focus on providing memory solutions for hyperscale cloud service providers, including customized memory for key clients like Microsoft and AWS [1][2]. Group 2: HBM Product Development - Micron's 12-layer HBM3E has begun shipping, powering Nvidia's B300, indicating progress in their HBM offerings [2]. - The next generation HBM4 is expected to enter mass production in 2026, followed by HBM4E production between 2027 and 2028 [2]. Group 3: Bonding Technology Innovations - Micron is considering the introduction of a new bonding technology called "Fluxless," which is being evaluated by competitors like Samsung [4][7]. - The current manufacturing process uses Non-Conductive Film (NCF) technology, but there are challenges with applying NCF effectively as the number of HBM stacks increases [5][6]. - The industry is moving towards fluxless bonding technology to address reliability issues associated with traditional methods, with various companies participating in quality testing [6][5]. Group 4: Competitive Landscape - Samsung is also testing fluxless bonding technology, aiming for HBM4 completion by the end of the year, indicating a competitive race in HBM advancements [7].