天科合达：8英寸SiC衬底和外延技术进展

Group 1 - The conference "Electric Transportation & Digital Energy SiC Technology Application and Supply Chain Upgrade Conference" will be held in Shanghai, featuring key industry players including TianKe HeDa, Mitsubishi Electric, and STMicroelectronics [2][3][5] - TianKe HeDa's CTO Liu Chunjun will present on the progress of 8-inch SiC substrates and epitaxy technology, highlighting the company's breakthroughs in silicon carbide materials [3][4] - The report will focus on the industrialization progress of 8-inch conductive SiC substrates and key process breakthroughs in 8-inch conductive epitaxy technology, including optimized substrate thickness and defect control [4] Group 2 - TianKe HeDa aims to achieve small-scale production of 8-inch conductive substrates and epitaxy by 2024, with substrate thickness optimized to 350μm, supporting cost reduction for high-voltage devices [4] - The company has made significant advancements in defect control, addressing industry challenges such as polytype defects and dislocation clusters, ensuring reliability for automotive-grade devices [4] - The conference will also feature discussions on core challenges and innovative breakthroughs in the industrialization process of silicon carbide technology, with dedicated sessions on digital energy and electric transportation applications [4][5]